Abstract: This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor ...
Abstract: A low-power ultra-wideband (UWB) low-noise amplifier (LNA) implemented in a $0.13 \mu \mathrm{~m}$ SiGe:C BiCMOS technology with $300 / 500 \mathrm{GHz} f_{\mathrm{T}} / f_{\max }$ is ...
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